LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PURPOSE: A light emitting device and a manufacturing method thereof are provided to improve the reliability and yield of a device by reducing a crystal defect of a nitride semiconductor grown up on a substrate. CONSTITUTION: A photoelectric layer(120) is formed on a substrate(110). The photoelectric layer includes a buffer layer(121), an n-type semiconductor layer(122), an active layer(123), and a p-type semiconductor layer(124). An ohmic contact layer(130) made of a transparent conductive material is formed on the p-type semiconductor layer. A first electrode(140) is formed on the ohmic contact layer. A second electrode(150) is formed on an exposed partial region of the n-type semiconductor layer.