| 摘要 |
PURPOSE: A light emitting diode and a fabricating method thereof are provided to reduce the lattice mismatch of a material and the difference of thermal expansion coefficients by forming a buffer layer between a light emitting structure and a substrate. CONSTITUTION: A light emitting structure is formed on the top of a substrate. The light emitting structure includes a first conductive semiconductor layer(122), an active layer, and a second conductive semiconductor layer(126). An uneven portion is formed on a side(201) of the light emitting structure. A first electrode(190) is formed on at least a part of the first conductive semiconductor layer. A second electrode(200) is formed on at least a part of the second conductive semiconductor layer. |
