Semiconductor device having improved layout of ESD device

摘要

PURPOSE: A semiconductor device having an improved layout of an ESD(Electrostatic-Sensitive Device) is provided to supply a larger ESD through wider area since an ESD is produced in a common area by sharing a lower area of two ore more adjacent pads. CONSTITUTION: A first ESD(Electrostatic-Sensitive Device) includes a first P-type diode(511a) and a first N-type diode(511b) connected to a first pad. A second ESD includes a second P-type diode(512a) and a second N-type diode(512b) connected to a second pad. The first ESD and the second ESD are formed in a common area(510) sharing lower portions of the first pad and the second pad. First ESD protective resistance is formed on the top of the first P-type diode and the second P-type diode. Second ESD protective resistance is formed on upper portion of the first ESD protective resistance.