CONTACT MANUFACTURING MATHOD FOR SEMICONDUCTOR TESTER

摘要

PURPOSE: A contact manufacturing method for testing a semiconductor device is provided to determine a pitch gap according to a cut width and a thickness of a conductor layer and an insulator layer, thereby effectively reducing the pitch gap. CONSTITUTION: An insulator layer(2) and a conductor layer(1) are consecutively and repeatedly laminated(S1). A first laminated material is vertically cut with a fixed thickness based on a side surface. A first cut body(M1) is acquired by consecutively and repeatedly forming a full-width insulator part(21) and a full-width conductor part(11) in a longitudinal direction. The first cut body and the insulator layer are consecutively and repeatedly laminated(S3). A second laminated material is vertically cut with a fixed thickness based on a front surface. A second cut body(M2) is acquired by consecutively forming the full-width insulator part, a partial-width insulator part(20), and a partial-width conductor part(10) in the longitudinal direction(S4).