| 摘要 |
<P>PROBLEM TO BE SOLVED: To easily deposit a fluorine-containing thin film on a substrate without introducing fluorine-based gas. <P>SOLUTION: A method reduces the pressure inside a vacuum film deposition container 1 to a vacuum state and applies a voltage to an electrode 3A disposed inside the vacuum film deposition container 1 to generate plasma from the introduced gas G introduced into the vacuum film deposition container 1. A target 3 is disposed in the electrode 3A so that an ion in the plasma collides with the target 3 and sputter particles are discharged from the target 3. A fluorine-containing solid compound 9 is disposed in the vicinity of the substrate 4 and exposed to the plasma so as to separate fluorine from the compound, and fluorine and sputter particles react with each other, thereby depositing the fluorine-containing thin film on the substrate 4. <P>COPYRIGHT: (C)2012,JPO&INPIT |
