| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an electrode structure capable of preventing the generation of an unnecessary electrical field between itself and a wall part of a processing chamber. <P>SOLUTION: Inside a chamber 11 of a plasma processing apparatus, a shower head 22 as an electrode structure faces a susceptor 12 on which a wafer W is placed, and is surrounded by a side wall part of the chamber 11. The shower head 22 comprises: an inner electrode 25 which faces a center part of the wafer W placed on the susceptor 12; an outer electrode 26 which is insulated from the inner electrode 25 and surrounds the inner electrode 25; and a ground electrode 27 which is insulated from the outer electrode 26 and surrounds the outer electrode 26. High-frequency power is applied from a second high-frequency power source 32 to each of the inner electrode 25 and the outer electrode 26. The ground electrode 27 is grounded and is surrounded by the side wall part of the chamber 11. <P>COPYRIGHT: (C)2012,JPO&INPIT |
