| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a magnetic spin-torque memory cell, often referred to as a magnetic tunnel junction cell, which has magnetic anisotropies (i.e., magnetization orientation) of an associated ferromagnetic layer aligned perpendicular to a wafer plane, or "out-of-plane", and a method of utilizing them. <P>SOLUTION: A method of switching the magnetization orientation of a ferromagnetic free layer of an out-of-plane magnetic tunnel junction cell comprises a step of passing an AC switching current through the out-of-plane magnetic tunnel junction cell. The AC switching current switches the magnetization orientation of the ferromagnetic free layer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
