INFRARED DETECTOR AND METHOD OF MANUFACTURE THEREOF AND MULTI-BAND UNCOOLED INFRARED FOCAL PLANE

摘要

An infrared detector of the present invention comprises a base structure and a micro-bridge structure. The base structure comprises a silicon substrate base (1) including a read out circuit, two read out circuit electrodes (6) and a reflective layer (2). The micro-bridge structure comprises a micro-bridge surface (5), two support pillars (3) and two support bridge legs (4). The reflective layer (2) is located on one side of the silicon substrate base (1). Two read out circuit electrodes (6) are symmetric against the diagonal line on the same side of the silicon substrate base (1) as the reflective layer (2), and the two read out circuit electrodes (6) are not in contact with the reflective layer (2). One end of each of the two support bridge legs (4) is connected with the micro-bridge surface (5), the other ends are respectively connected with the read out circuit through the support pillars (3) and the read out circuit electrodes (6), making the micro-bridge surface (5) hang above the reflective layer (2), forming an optical resonant cavity between the micro-bridge surface (5) and the reflective layer (2). There are a support layer, a thermal sensitive layer, a passivation layer, and an electromagnetic wave excitation layer up from the optical resonant cavity sequentially on the surface of the micro-bridge. Besides, it also provides a method of manufacturing a detector and a multi-band infrared focal plane. The present invention enables a multi-band uncooled infrared focal plane which has simple structure, small volume, less difficulty in production process, low cost and high yield.