| 摘要 |
The disclosure provides for a direct wafer bonding method including providing a bonding layer upon a first and second wafer, and directly bonding the first and second wafers together under heat and pressure. The method may be used for directly bonding an GaAs-based, InP-based, GaP-based, GaSb-based, or Ga(In)N-based device to a GaAs device by introducing a highly doped (A1)(Ga)InP(As)(Sb) layer between the devices. The bonding layer material forms a bond having high bond strength, low electrical resistance, and high optical transmittance. |
