MANUFACTURING METHOD OF A TRANSISTOR

摘要

A method for forming double-gate transistor is provided. The method includes: growing a bottom gate electrode (2), an active region (4), and a conductive film (70) on the front surface of the substrate (1) in turn; coating a photo-resist on the conductive film (70); forming the photo-resist pattern (8) by carrying out back exposure from the back surface of the substrate (1) under masking by the bottom gate electrode (2); forming a top gate electrode (7) by etching the conductive film (70) under masking by the photo-resist pattern (8), wherein the substrate (1), the active region (4), and the conductive film (70) are transparent while the bottom gate electrode (2) is opaque. The method enhances the precision of self-aligned etching by using the bottom electrode (2) as a natural mask, and is also cost effective.