<p>A magnetic tunneling junction (MTJ) device and fabrication method is disclosed. In a particular embodiment, an apparatus is disclosed that includes an MTJ device. The MTJ device includes a barrier layer, a free layer, and a magnesium (Mg) capping layer. The free layer is positioned between the barrier layer and the magnesium (Mg) capping layer.</p>
申请公布号
WO2012074537(A1)
申请公布日期
2012.06.07
申请号
WO2010US60590
申请日期
2010.12.15
申请人
QUALCOMM INCORPORATED;LEE, KANGHO;ZHU, XIAOCHUN;LI, XIA;KANG, SEUNG H.
