发明名称 |
COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
A compound semiconductor device includes a substrate; an initial layer formed over the substrate; and a core layer which is formed over the initial layer and contains a Group III-V compound semiconductor. The initial layer is a layer of Group III atoms of the Group III-V compound semiconductor contained in the core layer. |
申请公布号 |
US2012138955(A1) |
申请公布日期 |
2012.06.07 |
申请号 |
US201113289314 |
申请日期 |
2011.11.04 |
申请人 |
ISHIGURO TETSURO;YAMADA ATSUSHI;FUJITSU LIMITED |
发明人 |
ISHIGURO TETSURO;YAMADA ATSUSHI |
分类号 |
H01L29/16;H01L21/20;H01L29/201 |
主分类号 |
H01L29/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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