发明名称 METHOD FOR MANUFACTURING GAS BARRIER FILM, GAS BARRIER FILM, AND ELECTRONIC DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a gas barrier film which has high gas barrier performance, excellent bending resistance and smoothness, to provide the gas barrier film, and to provide an electronic device using the gas barrier film. <P>SOLUTION: The gas barrier film 10 has a laminated structure of: a metal oxide-containing vapor deposition layer 2 which is formed on a base material 1 such as a resin film by a vapor deposition method such as a plasma CVD method; and a polysilazane reformed layer 3 formed thereon by applying a liquid containing polysilazane thereto followed by drying and irradiating it with vacuum ultraviolet ray. The gas barrier film is subjected to at least one of an excimer treatment of irradiating the vapor deposition layer 2 with vacuum ultraviolet ray and a plasma treatment of irradiating the polysilazane reformed layer 3 with plasma. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012106421(A) 申请公布日期 2012.06.07
申请号 JP20100257393 申请日期 2010.11.18
申请人 KONICA MINOLTA HOLDINGS INC 发明人 KAWAMURA TOMONORI
分类号 B32B9/00;B32B27/00;B32B37/00;C23C16/40;C23C16/42;C23C16/56;H01L51/50;H05B33/04 主分类号 B32B9/00
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