发明名称 |
METHOD FOR MANUFACTURING GAS BARRIER FILM, GAS BARRIER FILM, AND ELECTRONIC DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a gas barrier film which has high gas barrier performance, excellent bending resistance and smoothness, to provide the gas barrier film, and to provide an electronic device using the gas barrier film. <P>SOLUTION: The gas barrier film 10 has a laminated structure of: a metal oxide-containing vapor deposition layer 2 which is formed on a base material 1 such as a resin film by a vapor deposition method such as a plasma CVD method; and a polysilazane reformed layer 3 formed thereon by applying a liquid containing polysilazane thereto followed by drying and irradiating it with vacuum ultraviolet ray. The gas barrier film is subjected to at least one of an excimer treatment of irradiating the vapor deposition layer 2 with vacuum ultraviolet ray and a plasma treatment of irradiating the polysilazane reformed layer 3 with plasma. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012106421(A) |
申请公布日期 |
2012.06.07 |
申请号 |
JP20100257393 |
申请日期 |
2010.11.18 |
申请人 |
KONICA MINOLTA HOLDINGS INC |
发明人 |
KAWAMURA TOMONORI |
分类号 |
B32B9/00;B32B27/00;B32B37/00;C23C16/40;C23C16/42;C23C16/56;H01L51/50;H05B33/04 |
主分类号 |
B32B9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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