| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a gas barrier film which is obtained efficiently by a method of forming a SiO<SB POS="POST">2</SB>type ceramic film rapidly at low temperatures and has improved gas barrier properties and film characteristics, e.g. scratch resistance, of the ceramic film obtained finally and a method of manufacturing the gas barrier film. <P>SOLUTION: There are provided: the gas barrier film which a gas barrier film produced by applying an application liquid containing a poly-silicon compound to a plastic film support and converting the applied poly-silicon compound to a ceramic by VUV light, in which the degree of dispersion of the poly-silicon compound, defined by the following expression, is 3.00-20.00; and a method of manufacturing the same. <P>COPYRIGHT: (C)2012,JPO&INPIT |
