| 发明名称 |
SEMICONDUCTOR MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing method capable of easily forming a desired circuit by print processing in a wafer state after a wafer test and a semiconductor device. <P>SOLUTION: A semiconductor manufacturing method comprises: a step of forming a groove part having a predetermined depth in a drawn pattern formation region of a wafer; a step of inspecting whether trimming is required for the wafer; a step of injecting a conductive solvent into the groove part of the wafer which requires the trimming and drawing a drawing pattern; a step of performing deaeration and low-temperature annealing after drawing the drawing pattern; a step of planarizing a film-formation surface after deaeration and low-temperature annealing were performed to form a film; and a step of performing high-temperature annealing after planarizing the film-formation surface. <P>COPYRIGHT: (C)2012,JPO&INPIT |
| 申请公布号 |
JP2012109581(A) |
申请公布日期 |
2012.06.07 |
| 申请号 |
JP20110276921 |
申请日期 |
2011.12.19 |
| 申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
SHIMIZU KAZUHIRO;AKIYAMA HAJIME;YASUDA NAOKI |
| 分类号 |
H01L21/768;H01L21/288;H01L21/3205;H01L21/336;H01L21/82;H01L21/822;H01L21/8234;H01L21/8247;H01L23/522;H01L27/04;H01L27/088;H01L27/10;H01L27/115;H01L29/739;H01L29/78;H01L29/788;H01L29/792 |
主分类号 |
H01L21/768 |
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