| 摘要 |
A neutron porosity measurement device uses semiconductor detectors located at different distances from a cavity configured to accommodate a neutron source. Each of the semiconductor detectors includes (i) a semiconductor substrate doped to form a pn junction, and having microstructures of neutron reactive material formed to extend from a first surface inside the semiconductor substrate, and (ii) electrodes, one of which is in contact with the first surface of the semiconductor substrate and another one of which is in contact with a second surface of the semiconductor substrate, the second surface being opposite to the first surface. The electrodes are configured to acquire an electrical signal occurring when a neutron is captured inside the semiconductor substrate. |
