发明名称 |
Local silicidation of via bottoms in metallization systems of semiconductor devices |
摘要 |
Electromigration behavior in complex metallization systems of semiconductor devices may be enhanced at critical areas between a metal line and a via by locally forming a copper/silicon compound. In some illustrative embodiments, the formation of the copper/silicon compound may be combined with other treatments for cleaning the exposed surface areas and/or modifying the molecular structure thereof. |
申请公布号 |
US8193086(B2) |
申请公布日期 |
2012.06.05 |
申请号 |
US20090640444 |
申请日期 |
2009.12.17 |
申请人 |
LETZ TOBIAS;FEUSTEL FRANK;GLOBALFOUNDRIES INC. |
发明人 |
LETZ TOBIAS;FEUSTEL FRANK |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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