| 摘要 |
<p>PURPOSE: A method for forming a side wall contact in a semiconductor device is provided to uniformly control location and depth of a sidewall contact by using a double shallow trench process and a sacrificial spacer. CONSTITUTION: A first trench(13) is formed by etching a substrate(11). A liner film(14A) is formed on a surface of the first trench. A sacrificial spacer covering one of sidewalls of the first trench is formed on the liner film. A second trench(21) is formed by etching the substrate under the first trench using the sacrificial spacer and the liner film as an etch barrier. A protective film(22) is formed on a surface of the second trench.</p> |
