发明名称 Stacked structure and production method thereof
摘要 The invention relates to a method of producing a stacked structure. The inventive method comprises the following steps consisting in: a) using a first plate (1) which is, for example, made from silicon, and a second plate (5) which is also, for example, made from silicon, such that at least one of said first (1) and second (5) plates has, at least in part, a surface (2; 7) that cannot bond to the other plate; b) providing a surface layer (3; 8), which is, for example, made from silicon oxide, on at least one part of the surface (2) of the first plate and/or the surface (7) of the second plate (5); and c) bonding the two plates (1; 5) to one another. The aforementioned bonding incompatibility can, for example, result from the physicochemical nature of the surface or of a coating applied thereto, or from a roughness value (r′2, r′7) which is greater than a predetermined threshold. The invention also relates to a stacked structure produced using the inventive method.
申请公布号 US8193069(B2) 申请公布日期 2012.06.05
申请号 US20040565621 申请日期 2004.07.15
申请人 MORICEAU HUBERT;ASPAR BERNARD;MARGAIL JACQUES;COMMISSARIAT A L'ENERGIE ATOMIQUE 发明人 MORICEAU HUBERT;ASPAR BERNARD;MARGAIL JACQUES
分类号 H01L21/76;B81C1/00;H01L21/762 主分类号 H01L21/76
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