发明名称 Charge pump operation in a non-volatile memory device
摘要 A charge pump in a memory device is activated to produce a programming voltage prior to data loading during a programming operation. During an initial programming cycle, first and second load voltages are charged from the charge pump. The first load is removed from the charge pump during a verify operation. The first load voltage is subsequently recharged by charge sharing from the second load voltage so that the charge pump is not initially necessary for recharging the first load voltage.
申请公布号 US8194466(B2) 申请公布日期 2012.06.05
申请号 US201113186766 申请日期 2011.07.20
申请人 HA CHANG WAN;MICRON TECHNOLOGY, INC. 发明人 HA CHANG WAN
分类号 G11C16/06 主分类号 G11C16/06
代理机构 代理人
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