| 摘要 |
A programming method of a flash memory device having memory cells, and a flash memory device to perform the method, including programming selected memory cells according to loaded data, sensing states of the programmed memory cells and firstly latching the sensed states, and determining whether a program-inhibited memory cell among the selected memory cells has been programmed, with reference to the loaded data and the latched states, before determining whether the selected memory cells have been properly programmed. |
