发明名称 SHUNT REGULATOR HAVING OVER-VOLTAGE PROTECTION CIRCUIT AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
摘要 A shunt regulator and a semiconductor device equipped with the same are provided, which obtain the safe current shunt using the small occupied area. A control circuit(110) is combined with the gap between the first node and ground voltage. The control circuit generates the gate control signal in response to voltage and reference voltage of the first node. The bypass circuit(120) forms the first current path between ground voltage and the first node in response to the gate control signal. The protection circuit(130) has the MOS transistor completely turned on in response to the current flowing in the bypass circuit. The protection circuit forms the second current path between the first node and gap ground voltage.
申请公布号 KR20090061334(A) 申请公布日期 2009.06.16
申请号 KR20070128313 申请日期 2007.12.11
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, HAN SU;JEONG, JOO HYUN
分类号 G05F3/24 主分类号 G05F3/24
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