发明名称 PROCESSING APPARATUS
摘要 PURPOSE: A processing apparatus is provided to easily change a discharge location of a process gas without changing a location of a circular partition member or a processing gas discharge unit. CONSTITUTION: A process chamber(2) processes a wafer(W) by using a process gas. A mounting table(4) mounts the wafer while being installed in the process chamber. The mounting table is connected to a second high frequency power supply(9) by interposing a matching device(8). A processing gas discharge unit(5) is installed within the process chamber facing the mounting table. The processing gas discharge unit discharges the process gas to the process chamber. The processing gas discharge unit is connected to a first high frequency power(7) by interposing a matching device(6).
申请公布号 KR20120056782(A) 申请公布日期 2012.06.04
申请号 KR20110122901 申请日期 2011.11.23
申请人 TOKYO ELECTRON LIMITED 发明人 TEZUKA KAZUYUKI;KATO KENICHI;SAWACHI ATSUCHI;KIKUCHI TAKAMICHI;MIMURA TAKANORI
分类号 H01L21/3065 主分类号 H01L21/3065
代理机构 代理人
主权项
地址