PURPOSE: A manufacturing method of a semiconductor device is provided to arrange a plurality of fine-pitch hole patterns using a layout of a space pattern and a big pitch line compared to the hole pattern. CONSTITUTION: First space patterns and first line patterns extended in a first direction are formed(S100). Second space patterns and second line patterns extended in a second direction are formed on the first space patterns and the second line patterns(S200). A first hole pattern is formed on a region in which the first and second space patterns are crossed(S300). A second hole pattern is formed on a region in which the first and second line patterns are crossed(S400).
