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发明名称
Semiconductor device and method for forming the same
摘要
<p>본 발명의 반도체 소자는 반도체 기판 내 매립된 관통 실리콘 비아와, 상기 관통 실리콘 비아 상부에 구비되되 일부는 상기 반도체 기판 내 매립되고, 일부는 상기 반도체 기판 상에 구비되는 전도성 범프를 포함하여, 관통 실리콘 비아와 전도성 범프와의 접착력을 향상시켜 반도체 소자의 수율을 향상시키는 효과를 제공한다.</p>
申请公布号
KR101150464(B1)
申请公布日期
2012.06.01
申请号
KR20100085474
申请日期
2010.09.01
申请人
发明人
分类号
H01L21/60;H01L23/48
主分类号
H01L21/60
代理机构
代理人
主权项
地址
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