| 摘要 |
PURPOSE: A semiconductor device manufacturing method is provided to increase adhesive force of a conductive material in which a penetration silicon via is buried, thereby preventing stripping of metal wires. CONSTITUTION: A groove is formed in order to arrange a penetration silicon via on a substrate(100). The groove is formed using a laser etching method or a DRIE(Deep Reactive Ion Etching) method. An MPS(Meta-stable Poly-Silicon) film(102) is formed on the surface of the groove. An oxide film(104) is formed on the surface of the MPS film. The groove is buried with a conductive material. |
