| 摘要 |
PURPOSE: A lateral double diffused metal-oxide semiconductor device is provided to increase absorption efficiency of emitted electrons by forming a guard ring in a floating type structure. CONSTITUTION: A gate(120), a source(140), a drain region(160) are formed on a substrate. A well region(220) is formed on one side of the drain region. A guard ring region(200) is formed in one side of above well region. The guard ring region is electrically connected to the well region. The guard ring region comprises a P-type well(260) and a guard ring(240).
|
