| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high frequency switch and a high frequency module having excellent distortion characteristics without increasing the insertion loss or the chip size. <P>SOLUTION: The high frequency switch comprises a plurality of I/O terminals 101-103 for inputting/outputting high frequency signals, basic switches 104, 105 provided between two input terminals 101, 103, and control terminals 106, 107, into which a control voltage for controlling conduction and interruption of the basic switches 104, 105 are entered. The basic switches 104, 105 are formed by connecting meandered FET110-113 and FET120-123 having meandered gate electrodes in multi-stage. Out of the FET110-113 and FET120-123, the FET113 and 120, with the shortest electrical distance from the I/O terminal 103 have finger lengths shorter than those of other FET110-112 and 121-123. <P>COPYRIGHT: (C)2012,JPO&INPIT |
