SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device with improved temperature dependence of withstand voltage characteristics and to provide a method of manufacturing the semiconductor device.

SOLUTION: In a semiconductor device, in order for electrons reaching from an N-type semiconductor region N4 not to increase in a depletion region DL formed when a large voltage with respect to a cathode terminal T1 is applied to an anode terminal T2, the N-type semiconductor region N4 is configured such that high-concentration N-type semiconductor regions N4a containing an impurity in high concentration and low-concentration N-type semiconductor regions N4b containing an impurity in low concentration compared to the high-concentration N-type semiconductor regions N4a are alternately disposed.

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