| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an inspection support method, an inspection method, a photomask and an inspection support system, enabling easy grasp of the existence of a surplus photoresist after development. <P>SOLUTION: Through a photomask 14 having a transfer pattern 18, formed on a resist 102 laminated on a wafer 100, to transfer a circuit pattern with prescribed resolution, and having an inspection pattern, formed on a portion of a region constituting the transfer pattern 18, with higher resolution than the prescribed resolution, a circuit pattern is transferred to the resist 102 by the irradiation of the resist 102 with light of a prescribed wavelength, corresponding to the prescribed resolution, for a prescribed irradiation time. After the circuit pattern is transferred to the resist 102, a wafer 104 having the resist is dipped into a developer in a developer tank 16. <P>COPYRIGHT: (C)2012,JPO&INPIT |
