IMPROVED TEMPLATE LAYERS FOR HETEROEPITAXIAL DEPOSITION OF III NITRIDE SEMICONDUCTOR MATERIALS USING HVPE PROCESSES

摘要

Methods of depositing ?II-nitride semiconductor materials on substrates include depositing a layer of ??-nitride semiconductor material on a surface of a substrate in a nucleation HVPE process stage to form a nucleation layer having a microstructure comprising at least some amorphous ?II-nitride semiconductor material. The nucleation layer may be annealed to form crystalline islands of epitaxial nucleation material on the surface of the substrate. The islands of epitaxial nucleation material may be grown and coalesced in a coalescence HVPE process stage to form a nucleation template layer of the epitaxial nucleation material. The nucleation template layer may at least substantially cover the surface of the substrate. Additional Ill-nitride semiconductor material may be deposited over the nucleation template layer of the epitaxial nucleation material in an additional HVPE process stage. Final and intermediate structures comprising ?II-nitride semiconductor material are formed by such methods.