| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve a withstand voltage of a semiconductor device. <P>SOLUTION: A semiconductor device 10 comprises a p-type semiconductor substrate 1, an n-type drift region 3 provided in the p-type semiconductor substrate 1, and a p-type body region 4 provided in the n-type drift region 3. An annular gate electrode 6 is provided above pn-junction portions 22 between the side surfaces of the p-type body region 4 and the n-type drift region 3 along the pn-junction portions 22. An n-type drain region 7 and an n-type source region 8 are provided in the n-type drift region 3 and the p-type body region 4 respectively, so as to sandwich a portion of the gate electrode 6. <P>COPYRIGHT: (C)2012,JPO&INPIT |
