发明名称 |
CHARGE PUMP CONTROL SCHEME USING FREQUENCY MODULATION FOR MEMORY WORD LINE |
摘要 |
A memory includes a word line having a word line voltage, a charge pump coupled to the word line, and a dynamic feedback control circuit coupled to the charge pump. The dynamic feedback control circuit is capable of changing a clock frequency of a clock signal supplied the charge pump from a first non-zero value to a second non-zero value depending on the difference between the word line voltage and a target threshold voltage.
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申请公布号 |
US2012134218(A1) |
申请公布日期 |
2012.05.31 |
申请号 |
US201113052637 |
申请日期 |
2011.03.21 |
申请人 |
YU HUNG-CHANG;CHIH YUE-DER;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
YU HUNG-CHANG;CHIH YUE-DER |
分类号 |
G11C7/00;G11C5/14 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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