| 摘要 |
<P>PROBLEM TO BE SOLVED: To perform writing in a magnetic element with a lower switching current density. <P>SOLUTION: A magnetic element 100 includes a fixed layer 110, a nonmagnetic spacer layer 120, and a free layer 130 having free layer magnetization. The spacer layer 120 exists between the fixed layer 110 and the free layer 130. The free layer 130 contains a doped ferromagnetic material. The doped ferromagnetic material contains at least one ferromagnetic material diluted by at least one non-magnetic material so that the free layer 130 has low saturation magnetization of 1430 emu/cm<SP POS="POST">3</SP>or less at room temperature, at least one ferromagnetic material doped ferrimagnetically, or at least one ferromagnetic material diluted by at least one non-magnetic material and doped ferrimagnetically. When a write current passes through the magnetic element 100, free layer magnetization is switched using spin transition. <P>COPYRIGHT: (C)2012,JPO&INPIT |
