发明名称 LIGHT EMITTING DIODE CHIP INCLUDING WAVELENTH-CONVERTING LAYER AND METHOD FOR FABRICATING THE SAME
摘要 PURPOSE: A light emitting diode chip which includes a wavelength conversion layer and a manufacturing method thereof are provided to include an open region for exposing an electrode pad of a light emitting diode chip on the wavelength conversion layer beforehand, thereby easily forming a bump. CONSTITUTION: A light emitting diode chip comprises a substrate, a semiconductor structure(120), and an electrode pad(130). The semiconductor structure is arranged on the substrate. The electrode pad is electrically connected to the semiconductor structure. A wavelength conversion layer(140) comprises an upper conversion layer and a lower conversion layer covering a side surface of the light emitting diode chip. An open region is arranged for opening the electrode pad.
申请公布号 KR20120054755(A) 申请公布日期 2012.05.31
申请号 KR20100116028 申请日期 2010.11.22
申请人 SEOUL SEMICONDUCTOR CO., LTD. 发明人 JUNG, SEOUNG HO;JUNG, JUNG HWA;KIM, BANG HYUN;KIM, EU GENE;KWON, SEOK SOON;KIM, JUNG DOO;SON, JUNG HUN
分类号 H01L33/50 主分类号 H01L33/50
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