| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which achieves highly reliable trench contact structure of an electrode, which is formed by self-alignment using gate trenches as a mask, and to provide a manufacturing method of the semiconductor device. <P>SOLUTION: According to an embodiment, a semiconductor device includes a first main electrode, a semiconductor layer, a first conductivity type base layer, a second conductivity type base layer, gate trenches, a first conductivity type semiconductor region, a second main electrode, a gate insulator film, a gate electrode, and an interlayer film. The first conductivity type semiconductor region is provided below a portion in an upper part of the gate trench which protrudes in a lateral direction relative to a lower part of the gate trench. The second main electrode is in contact with the first conductivity type semiconductor region. The interlayer film has an insulator film provided on the gate electrode and a conductive film provided on the insulator film and is embedded in the upper part of the gate trench. <P>COPYRIGHT: (C)2012,JPO&INPIT |
