摘要 |
PURPOSE: An organic semiconductor device composite material, an electronic device, and a transistor which includes a polymer acquired from the same are provided to minimize a grain boundary surface, thereby providing excellent charge mobility. CONSTITUTION: An organic semiconductor device composite material includes a metal-included compound. The metal-included compound is selected from a group comprised of a transition metal-included compound, a lanthanide metal-included compound, and a combination of the same. The organic semiconductor device composite material has a molecular weight in a range of 1000 to 100000. The metal-included compound is metallic salts selected among Zn, Ag, Cu, Ni, Co, Pt, and a combination of the same. The salt is selected among sulfate, chlorate, nitrate, and a combination of the same. |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHUNG, JONG WON;KIM, DO HWAN;LEE, BANG LIN;PARK, JEONG IL;JIN, YONG WAN;LEE, SANG YOON |