| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for measuring utilizing dilution of content of impurity in silicon by a float zone method for enabling measurement of the impurity in the silicon to be inspected using photoluminescence or FTIR or both of them. <P>SOLUTION: A single crystal rod is made from the silicon to be inspected by a zone pulling-up method, the single crystal rod in introduced into a sleeve of single crystal or polycrystal silicon having specified carbon content and dopant content in at least one time dilution step, a diluted silicon single crystal rod is made from the rod or the sleeve by the zone pulling-up method, and in the method for measuring the impurity in the silicon, the measurement of the impurity in the silicon to be inspected is carried out using the photoluminescence or the FTIR or both of them based on the diluted single crystal rod. <P>COPYRIGHT: (C)2012,JPO&INPIT |
