| 摘要 |
<p>A magnetic tunnel junction element formed on a substrate responsive to a magnetic field angle perpendicular to a sensing current passing through said magnetic tunnel junction, comprising:
- a plurality of magnetic tunnel junction elements formed on a substrate, each magnetic tunnel junction element comprising:
- an anti-ferromagnetic material deposited on a bottom electrode formed on said substrate; and
- a pinned synthetic multiple layer formed on said antiferromagnetic material; wherein said plurality of magnetic tunnel junction elements are annealed for a first time in the presence of a strong magnetic field in a direction of the reference axis;
wherein said plurality of magnetic tunnel junction elements are then patterned such that each magnetic tunnel junction element has a large dimensional aspect ratio and has large anisotropies in each of said pinned synthetic multiple layer of said plurality of magnetic tunnel junction elements; and
said plurality of magnetic tunnel junction elements is annealed for a second time with no external magnetic field so that exchange pinning is reduced during said annealing and strong stress induced anisotropies of said pinned synthetic multiple layer align magnetization of said pinned synthetic multiple layer align a long axis of each of said plurality of magnetic tunnel junctions.</p> |
