发明名称 |
Semiconductor device and method for manufacturing the same |
摘要 |
A semiconductor device comprises a memory cell region, a peripheral circuit region and a boundary region. In the memory cell region, a concave lower electrode and a foundation layer have a same uppermost surface positioned in a height of H above the plane-A. In the boundary region, one concave lower conductive region and a foundation layer have a same uppermost surface positioned in a height of H above the plane-A. |
申请公布号 |
US8188529(B2) |
申请公布日期 |
2012.05.29 |
申请号 |
US20090318735 |
申请日期 |
2009.01.07 |
申请人 |
NAKAMURA YOSHITAKA;KOMEDA KENJI;SUEWAKA RYOTA;IKEDA NORIAKI;ELPIDA MEMORY, INC. |
发明人 |
NAKAMURA YOSHITAKA;KOMEDA KENJI;SUEWAKA RYOTA;IKEDA NORIAKI |
分类号 |
H01L27/108 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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