发明名称 Semiconductor device and method for manufacturing the same
摘要 A semiconductor device comprises a memory cell region, a peripheral circuit region and a boundary region. In the memory cell region, a concave lower electrode and a foundation layer have a same uppermost surface positioned in a height of H above the plane-A. In the boundary region, one concave lower conductive region and a foundation layer have a same uppermost surface positioned in a height of H above the plane-A.
申请公布号 US8188529(B2) 申请公布日期 2012.05.29
申请号 US20090318735 申请日期 2009.01.07
申请人 NAKAMURA YOSHITAKA;KOMEDA KENJI;SUEWAKA RYOTA;IKEDA NORIAKI;ELPIDA MEMORY, INC. 发明人 NAKAMURA YOSHITAKA;KOMEDA KENJI;SUEWAKA RYOTA;IKEDA NORIAKI
分类号 H01L27/108 主分类号 H01L27/108
代理机构 代理人
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