| 摘要 |
A non-volatile memory device contains a three dimensional stack of horizontal diodes located in a trench in an insulating material, a plurality of storage elements, a plurality of word lines extending substantially vertically, and a plurality of bit lines. Each of the plurality of bit lines has a first portion that extends up along at least one side of the trench and a second portion that extends substantially horizontally through the three dimensional stack of the horizontal diodes. Each of the horizontal diodes is a steering element of a respective non-volatile memory cell of the non-volatile memory device, and each of the plurality of storage elements is located adjacent to a respective steering element. |
