| 发明名称 |
Method to alter silicide properties using GCIB treatment |
| 摘要 |
A method of manufacturing a semiconductor device is described. The method comprises performing a gas cluster ion beam (GCIB) pre-treatment and/or post-treatment of at least a portion of a silicon-containing substrate during formation of a silicide region.
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| 申请公布号 |
US8187971(B2) |
申请公布日期 |
2012.05.29 |
| 申请号 |
US20100873573 |
申请日期 |
2010.09.01 |
| 申请人 |
RUSSELL NOEL;HAUTALA JOHN J.;GUMPHER JOHN;TEL EPION INC. |
发明人 |
RUSSELL NOEL;HAUTALA JOHN J.;GUMPHER JOHN |
| 分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
| 代理机构 |
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