| 摘要 |
A CMOS IC according to the invention includes a discharging circuit for preventing electrostatic breakdown from occurring. The discharging circuit includes a discharging NMOSFET Qe, which couples a gate terminal node Vgp continuous to the gate of an outputting PDMOS transistor Qo and the gate of a discharging NMOSFET Qe via a capacitor Ce, and connects the drain of the discharging NMOSFET Qe to a gate terminal node Vgp continuous to the gate terminal of the outputting PDMOS transistor Qo. The discharging circuit 300 also includes a pull-down resistor disposed between the gate of the discharging NMOSFET Qe and the ground for preventing the discharging NMOSFET Qe from operating in a steady state condition. The CMOS IC according to the invention makes the discharging NMOSFET Qe trigger to operate by the potential change at the node corresponding to the potential change of the power supply line, when a surge caused by static electricity and such is applied to the power supply line. |
