发明名称 |
SHALLOW HEAVILY DOPED SEMICONDUCTOR LAYER BY CYCLIC SELECTIVE EPITAXIAL DEPOSITION PROCESS |
摘要 |
<p>The deposition method comprises providing a substrate with a first mono-crystalline zone made of a semiconductor material and a second zone made of an insulating material. During a passivation step, a passivation atmosphere is applied on the substrate so as to cover the first zone with doping impurities. During a deposition step, gaseous silicon and/or germanium precursors are introduced and a doped semiconductor film is formed. The semiconductor film is mono-crystalline over the first zone and has a different texture over the second zone. During an etching step, a chloride gaseous precursor is applied on the substrate so as to remove the semiconductor layer over the second zone.</p> |
申请公布号 |
WO2012067625(A1) |
申请公布日期 |
2012.05.24 |
申请号 |
WO2010US57441 |
申请日期 |
2010.11.19 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES;STMICROELECTRONICS, INC.;DESTEFANIS, VINCENT;LOUBET, NICOLAS |
发明人 |
DESTEFANIS, VINCENT;LOUBET, NICOLAS |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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