发明名称 |
METHOD OF FABRICATING SEMICONDUCTOR DEVICE |
摘要 |
A method of forming a dielectric layer having an air gap to isolate adjacent wirings or a gate stack of the semiconductor device is provided. A method of fabricating a semiconductor device includes providing a semiconductor substrate on which a plurality of wirings are formed adjacent to one another and forming a dielectric layer filling an upper portion of a space between the adjacent wirings to form air gaps by a thermal chemical vapor deposition method.
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申请公布号 |
US2012129356(A1) |
申请公布日期 |
2012.05.24 |
申请号 |
US201213363673 |
申请日期 |
2012.02.01 |
申请人 |
KIM JIN-GYUN;KOO BON-YOUNG;HWANG KI-HYUN |
发明人 |
KIM JIN-GYUN;KOO BON-YOUNG;HWANG KI-HYUN |
分类号 |
H01L21/31 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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