发明名称 |
MRAM Cells and Circuit for Programming the Same |
摘要 |
A circuit includes magneto-resistive random access memory (MRAM) cell and a control circuit. The control circuit is electrically coupled to the MRAM cell, and includes a current source configured to provide a first writing pulse to write a value into the MRAM cell, and a read circuit configured to measure a status of the MRAM cell. The control circuit is further configured to verify whether a successful writing is achieved through the first writing pulse. |
申请公布号 |
US2012127788(A1) |
申请公布日期 |
2012.05.24 |
申请号 |
US201213364955 |
申请日期 |
2012.02.02 |
申请人 |
CHUNG SHINE;WANG HUNG-SEN;CHUNG TAO-WEN;LIN CHUN-JUNG;WANG YU-JEN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHUNG SHINE;WANG HUNG-SEN;CHUNG TAO-WEN;LIN CHUN-JUNG;WANG YU-JEN |
分类号 |
G11C11/16 |
主分类号 |
G11C11/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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