METHOD FOR MANUFACTURING NONVOLATILE SEMICONDUCTOR STORAGE ELEMENT, AND NONVOLATILE SEMICONDUCTOR STORAGE ELEMENT

摘要

Provided are a method for manufacturing a variable resistance-type nonvolatile semiconductor storage element, and a nonvolatile semiconductor storage element that is capable of low-voltage high-speed operation during initial breakdown and has excellent diode element characteristics. The method for manufacturing the nonvolatile semiconductor storage element has a process whereby a portion of a variable resistance film in a region near the end face of a variable resistance layer (9) is insulated after the upper electrode (110) of the variable resistance element is formed and before the process where at least the upper electrode (107) of an MSM diode element is formed.