| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a microstructure in which the gate length can be optimized. <P>SOLUTION: A semiconductor device 10 comprises a gate insulating film 15 formed of a high dielectric constant material on a substrate, a metal gate electrode formed on the gate insulating film 15, and a sidewall spacer 21 formed on the sidewall of the metal gate electrode. An offset spacer 19 is formed between the sidewall of the metal gate electrode and the inner wall of the sidewall spacer 21 in either a first conductivity type transistor and/or a second conductivity type transistor. Alternatively, offset spacers 19 having different thicknesses are formed in the first conductivity type transistor and the second conductivity type transistor. <P>COPYRIGHT: (C)2012,JPO&INPIT |
