发明名称 SIDEWALL IMAGE TRANSFER PITCH DOUBLING AND INLINE CRITICAL DIMENSION SLIMMING
摘要 A method for patterning a substrate is described. The patterning method may include performing a lithographic process to produce a pattern and a critical dimension (CD) slimming process to reduce a CD in the pattern to a reduced CD. Thereafter, the pattern is doubled to produce a double pattern using a sidewall image transfer technique.
申请公布号 US2012128935(A1) 申请公布日期 2012.05.24
申请号 US201113158899 申请日期 2011.06.13
申请人 DUNN SHANNON W.;HETZER DAVE;TOKYO ELECTRON LIMITED 发明人 DUNN SHANNON W.;HETZER DAVE
分类号 B32B3/30;G03F7/20 主分类号 B32B3/30
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