发明名称 |
BIPOLAR SPIN-TRANSFER SWITCHING |
摘要 |
<p>Orthogonal spin-transfer magnetic random access memory (OST-MRAM) uses a spin-polarizing layer magnetized perpendicularly to the free layer to achieve large spin-transfer torques and ultra-fast energy efficient switching. OST-MRAM devices that incorporate a perpendicularly magnetized spin-polarizing layer and a magnetic tunnel junction, which consists of an in-plane magnetized free layer and synthetic antiferromagnetic reference layer, exhibit improved performance over prior art devices. The switching is bipolar, occurring for positive and negative polarity pulses, consistent with a precessional reversal mechanism, and requires an energy less than 450 fJ and may be reliably observed at room temperature with 0.7 V amplitude pulses of 500 ps duration.</p> |
申请公布号 |
WO2012068309(A2) |
申请公布日期 |
2012.05.24 |
申请号 |
WO2011US61077 |
申请日期 |
2011.11.16 |
申请人 |
NEW YORK UNIVERSITY;KENT, ANDREW;BEDAU, DANIEL;LIU, HUANLONG |
发明人 |
KENT, ANDREW;BEDAU, DANIEL;LIU, HUANLONG |
分类号 |
G11C11/15 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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